V. The reason for the low value of breakdown voltage V BD in the bipolar I-MOS compared with the p-i-n I-MOS is the internal gain mechanism present in the bipolar I-MOS.

Since the switching from ON-state to OFF-state involves sweeping the excess holes by drift mechanism, similar to that of the p-i-n I-MOS, the speed of the bipolar I-MOS can be expected to be as high as that of the former. The results demonstrate that the MSM-SiNW biristor has great potential as a biosensor based on its fast response time, scalability, simpler recovery mechanism, and greater sensitive even with smaller channel lengths. Best foodie: awarded to Peter Atzen (Denmark) for his work in promoting gastronomic spaces, ranging from 50 Best and Michelin restaurants, to street food stalls. There are two major differences between the bipolar I-MOS and the p-i-n I-MOS: 1) in the bipolar I-MOS, the source and drain regions are similarly doped as opposed to the p-i-n I-MOS in which they are differently doped and 2) the impact ionization occurs near the drain region in the bipolar I-MOS, and the generated electrons move toward the drain terminal without passing through the body under the gate oxide.The detailed sensitivity analysis is also carried for the proposed device with parametric sweep method.

It is notable that for S/D doping concentration above 1019 atoms/cm3, there is a significant increase in S values which is not recommended as the switching speed getting higher distracting performance of the device. This sensor design is expected to have a lower thermal budget as the doping process is no longer required.You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use.