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By Walther 1872-1916 Lob

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Read or Download Electrochemistry of organic compounds : authorized translation from the author's enlarged and revised third edition of Electrolysis and electrosynthesis of organic compounds PDF

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Extra info for Electrochemistry of organic compounds : authorized translation from the author's enlarged and revised third edition of Electrolysis and electrosynthesis of organic compounds

Example text

Darauf wird eine dünne Metallschicht aufgedampft. Wegen der Tatsache, daß der Isolator zumeist eine Oxidschicht ist, wird sehr häufig die Abkürzung MOS (Metall – Oxid – Halbleiter) verwendet, oft in sprachlich verkürzter Form. Ein Feldeffekt-Transistor (FET) in MOS-Ausführung wird so zum „MOSFET“. In Abb. 9 ist der Aufbau eines MOSFETs skizziert. Es wird angenommen, daß das Bauelement auf einem Substrat aus p-dotiertem Silicium aufgebaut ist. In dieses Substrat sind durch Diffusion zwei n-leitende Zonen eingebaut worden.

B. 3 Piezoelektrizität und Pyroelektrizität Der piezoelektrische Effekt wurde schon im 19. Jahrhundert von den Brüdern Curie entdeckt. Wenn bestimmte Kristalle, wie etwa der Į-Quarz, zusammengedrückt werden, dann bildet sich zwischen gegenüberliegenden Flächen eine abklingende Spannung aus. 1 Sensor-Physik 37 mit umgekehrtem Vorzeichen. Umgekehrt führen von außen angelegte elektrische Spannungen zu Deformationen des Kristalls. Bringt man Kristalle dieser Art in einen Rückkopplungskreis, dann können sie permanent zu Schwingungen angeregt werden.

Tatsächlich sind MOSFETs echte Spannungsverstärker, da sie praktisch leistungslos arbeiten. MOSFETs bilden die Basis bestimmter Sensoren, die in den Kapiteln 3 und 7 behandelt werden. Auch auf MOS-Bauelemente läßt sich die Vorstellung von einer Bandverbiegung an der Grenze zwischen Halbleiter und Isolator anwenden. Für das Beispiel p-dotierten Halbleitermaterials lassen sich die in Abb. 10 skizzierten drei Fälle (a) Anreicherung von Löchern; (b) Verarmung von Löchern und (c) Inversion (Anreicherung von Elektronen) danach unterscheiden, ob die Oberflächenladung ȥ an der Grenzfläche Halbleiter-Isolator größer oder kleiner ist als das Potential ij im Inneren des Halbleiters.

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