By Seungbum Hong, Orlando Auciello, Dirk Wouters
This book is an creation to the basics of rising non-volatile stories and gives an summary of destiny tendencies within the box. Readers will locate insurance of 7 very important reminiscence applied sciences, together with Ferroelectric Random entry reminiscence (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change thoughts (PCM), Oxide-based Resistive RAM (RRAM), Probe garage, and Polymer thoughts. Chapters are dependent to mirror diffusions and clashes among diversified topics. EmergingNon-Volatile thoughts is an amazing e-book for graduate scholars, college, and execs operating within the quarter of non-volatile memory.
This e-book also:
Covers key reminiscence applied sciences, together with Ferroelectric Random entry reminiscence (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), between others.
Provides an outline of non-volatile reminiscence fundamentals.
Broadens readers’ knowing of destiny tendencies in non-volatile memories.
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Extra info for Emerging Non-Volatile Memories
18 μm node and Fig. 10b shows the schematic of the stacked cell for FeRAM-CMOS integration at the 45 nm node and the allowable processing temperature. Another issue that needs to be addressed is the integration of robust hydrogen barriers to protect the ferroelectric capacitor-CMOS integrated FeRAM architecture 1 Review of the Science and Technology for Low- and High-Density Nonvolatile… 21 Fig. 9 (a) Schematic of low-density FeRAM structure with ferroelectric capacitor (micron size range) integrated with CMOS transistor for FeRAM cell with no cross-talking via electrical isolation provided by the CMOS transistor; (b) schematic of high-density FeRAM structure with ferroelectric capacitor (nanoscale size range) integrated with CMOS transistor for FeRAM cell with no cross-talking via electrical isolation provided by the CMOS transistor Fig.
Control 38, 690 (1991) 2. T. Evans, R. Womack, IEEE J. Solid State Circuits 23, 1171 (1988) 3. F. A. Paz de Araujo, Science 246, 1400 (1989) 4. Papers S. Dey, R. Zuleeg, Ferroelectrics 108, 37 (1990) 5. in Proceedings of the 3th to 18th International Symposium on Integrated Ferroelectrics, Integrated Ferroelectrics, vol. 22, Issue 1-4 (1998) 6. K. M. J. ), in Proceedings of the 8th International Symposium on Integrated Ferroelectrics, Integrated Ferroelectrics, vols. 14, 15 and 16, 1997 7. B. A.
In addition, because Pt has much lower resistivity (~12–15 μΩ cm) than oxide electrodes (≥80 μΩ cm) used for PZT-based capacitors, the RC time constant is much lower for SBT than for PZT-based FeRAMs, and that is why SBT-based 20 O. Auciello et al. , the SUICA (Super Urban Intelligent Card) smart card that lets people pay at vending machines, shops, public transportation, and much more in Japan. 35–45 nm CMOS Device Generations In the first generation of FeRAMs, whether PZT or layered perovskite (such as SBT and SBTN)-based devices, the IC process geometry may involve thin film thickness of 60–150 nm.