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Istfa '96: lawsuits of the twenty second overseas Symposium for trying out and Failure research 18-22 November 1996 la, California

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Extra resources for ISTFA '96 : proceedings of the 22nd International Symposium for Testing and Failure Analysis : 18-22 November 1996, Los Angeles, California

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35 um processes, of which the most important characteristics are given in table 1. 35um technologies from a multitude of silicon vendors. This approach involves adaptations in FIB hardware (insulator deposition), software (image alignment), design practice (alignment marks, spare parts, routing recommendations) and FIB practice (procedure for node localisation and contacting, via drill and fill). g. between minimum spacing overlying metallization), it is not evident to reproducibly fill such holes and obtain a good and reliable via resistance.

This procedure is very quick, but asks for an excellent placement of the via drill window. It is perfectly feasible once the operator is trained to translate the observed topography of the passivation into the exact location of the top level metal (this is sometimes a bit misleading due to asymmetry caused by the secondary electron detector). A disadvantage of this method is the higher resistance that is obtained from high aspect ratio FIB vias. This will be discussed in detail in one of the following sections.

Teamwork and brainstorming were utilized to identify the options and maximize the chance for success. In both cases, the photoemission microscope was raised as a potentially useful tool. This option was ultimately pursued because the technique was fast and non-invasive to the part. ) This paper 41 IF from the IC manufacturer with standardized EEPROM states. Each EEPROM is reprogrammed during the process prior to assembly into the module. As part of the reprogramming, the IC is laser marked with the program ID.

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