Download Physics and technology of heterojunction devices by D. Veron Morgan, Robin H. Williams PDF

By D. Veron Morgan, Robin H. Williams

This publication brings jointly advancements in either the physics and engineering of semiconductor units. a lot awareness is paid to so-called 'band hole engineering' that is permitting new and better functionality units to be researched and introduced.

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Note the quenching of the current at high magnetic fields 20 r VV Fig. 8 Fan chart showing the positions of minima in d2I/dB2 and in a^I/dV2 in B—V space for structure A This illustrates the transition from electric to magnetic quantisation 42 Resonant tunnelling effects in semiconductor heterostructures energy levels in the quantum well, € n(ky), and in the accumulation layer ea(ky) separately. e. ), E= ( — £,0,0). #,0), and taking the origin of co-ordinates to be at the right hand interface of the emitter barrier, we can write the wavefunction as ip(r) = exp[i(kyy +kzz)](p{x), where (j)(x) is a solution of the one-dimensional Schrodinger equation, h2k\ -— 2 + m Q)c(x- ^ ) -e 2 +m v I | (x) V

In this case, hybrid magnetoelectric states form in the quantum well and give rise to clear resonances in the tunnel current6"10. The basic properties of these magneto-electric resonances can be understood qualitatively by means of a semi-classical model. 4). F i g . 2 Conduction band profile (electron potential energy) across a double barrier resonant tunnelling structure The leftrhand contact acts as the electron emitter. When there is an undoped interface between the heavily doped contact and the barriers, an electron accumulation layer (shaded) is formed adjacent to the emitter barrier.

63 who used a single sharply defined doping layer, or d doped layer, placed near the heterointerface on the low gap side. This was referred to as 'quantum interfaceinduced', or QUID. The conduction band profile for such doping of an AlGaAs/GaAs junction is illustrated in Fig. 13. Because of the asymmetry of the potential at the interface the electron charge densities in the individual subbands in the quantum well are displaced from the centroid of the ionised donor sheet. As a result of this dipole layer the barrier height for perpendicular transport is much reduced relative to that in the undoped case.

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