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Extra resources for Surfaces and Interfaces: Physics and Electronics
127 (1962) 150. C. Sebenne et al. (Phys. Rev. J. Himpsel, G. A. 41 eV. This value has been used for figs. 3 and 4 whereas figs. 1 and 2 use the value of Allen and Gobeli. 18 eV larger for Si(l 1 1 ) - ( 7 X 7 ) .  F. Houzay, G. Guichar, R. Pinchaux, G. Jezequel, F. Solal, A. Barsky, P. Steiner and Y. Petroff, Surface Sci. 132 (1983) 40. V. G. M. N I C H O L L S Department Linkoping, of Physics and Measurement Sweden Technology, Linkoping Institute of Technology, S-581 83 Received 2 September 1982; accepted for publication 17 December 1982 Angle-resolved photoemission studies on the Si( 111)2 X 1 surface are reported.
E. Northrup, J. L. Cohen, Phys. Rev. Letters 47 (1981) 1910. G. V. M. A. Flodstrom, Phys. Rev. Letters 48 (1982) 1032. E. L. Cohen, Phys. Rev. Letters 49 (1982) 1349. C. Pandey, Phys. Rev. Letters 47 (1981) 1913. determined by G. 48 eV for EF-EV unpublished). 33 eV reported by Gobeli and Allen. J. Chadi, to be published. E. L. Cohen, unpublished. J. Chadi, Phys. Rev. B26 (1982) 4762. 46 Surface Science 132 (1983) 4 6 - 4 8 North-Holland Publishing Company THE ir-BONDED CHAIN-MODEL FOR S i ( l l l ) - ( 2 X 1) IN VIEW OF RECENT WAVEVECTOR-RESOLVED ELECTRON ENERGY L O S S SPECTRA H.
J. Chadi, to be published. E. L. Cohen, unpublished. J. Chadi, Phys. Rev. B26 (1982) 4762. 46 Surface Science 132 (1983) 4 6 - 4 8 North-Holland Publishing Company THE ir-BONDED CHAIN-MODEL FOR S i ( l l l ) - ( 2 X 1) IN VIEW OF RECENT WAVEVECTOR-RESOLVED ELECTRON ENERGY L O S S SPECTRA H. L U T H , A. R I T Z and R. M A T Z 2. Physikalisches Institut der Rheinisch-Westfalischen Aachen, Fed. Rep. of Germany Technischen Hochschule Aachen, D-5100 Received 4 November 1982; accepted for publication 29 November 1982 Transition energies between the occupied and empty dangling bond surface state bands of cleaved Si( 111 )-(2 X 1) surfaces are measured by means of high resolution electron energy loss spectroscopy.